Nicolas Fressengeas @fresseng · activity timestamp 10 years ago Bandgap energy bowing parameter of strained and relaxed InGaN layers, This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed InxGa1−xN layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0 Reply Boost or quote Boost Quote Like More actions Copy link Flag this media Block Delete media Deleting... Delete from feeds Deleting...
